Design of Unique NAND Flash Memory Cells with Low Program Disturbance Utilizing Novel Booster Line
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dependence of Electrical Characteristics on the Depth of the Recess Region in the Scaled Tantalum Nitride–Aluminum Oxide–Silicon Nitride–Silicon Oxide–Silicon Flash Memory Devices;Japanese Journal of Applied Physics;2011-12-01
2. Dependence of Electrical Characteristics on the Depth of the Recess Region in the Scaled Tantalum Nitride–Aluminum Oxide–Silicon Nitride–Silicon Oxide–Silicon Flash Memory Devices;Japanese Journal of Applied Physics;2011-11-30
3. Decrease in Interference Effects between Cells for Metal–Oxide–Nitride–Oxide–Silicon NAND Flash Memory Devices with Metal Spacer Layers;Japanese Journal of Applied Physics;2011-07-20
4. Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Memory Device with Different Tunneling Oxide Thicknesses;Journal of Nanoscience and Nanotechnology;2011-07-01
5. Decrease in Interference Effects between Cells for Metal–Oxide–Nitride–Oxide–Silicon NAND Flash Memory Devices with Metal Spacer Layers;Japanese Journal of Applied Physics;2011-07-01
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