Dependence of Electrical Characteristics on the Depth of the Recess Region in the Scaled Tantalum Nitride–Aluminum Oxide–Silicon Nitride–Silicon Oxide–Silicon Flash Memory Devices-Reference-Cited by-同舟云学术

Dependence of Electrical Characteristics on the Depth of the Recess Region in the Scaled Tantalum Nitride–Aluminum Oxide–Silicon Nitride–Silicon Oxide–Silicon Flash Memory Devices

Published:2011-11-30 Issue: Volume:50 Page:124202
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jang Sang Hyun,Jin Jun,Kim Kyoung Won,Kim Hyun Woo,You Joo Hyung,Lee Keun Woo,Kim Tae Whan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference19 articles.

1. A Novel nand Flash Memory With Asymmetric S/D Structure Using Fringe-Field-Induced Inversion Layer

2. Fin Width $(W_{\rm fin})$ Dependence of Programming Characteristics on a Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS Device for a NOR-Type Flash Memory Device

3. A 125-mm/sup 2/ 1-Gb NAND flash memory with 10-MByte/s program speed

4. Design of Unique NAND Flash Memory Cells with Low Program Disturbance Utilizing Novel Booster Line

5. Flash Memory Device with `I' Shape Floating Gate for Sub-70 nm NAND Flash Memory

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement of electrical characteristics of the coupling ratio and the program/erase operation for NAND flash memories with an asymmetric interpoly-dielectric structure;Japanese Journal of Applied Physics;2014-06-01

2. Trap characterization of silicon nitride thin films by a modified trap spectroscopy technique;Journal of Applied Physics;2013-10-21