Dependence of Electrical Characteristics on the Depth of the Recess Region in the Scaled Tantalum Nitride–Aluminum Oxide–Silicon Nitride–Silicon Oxide–Silicon Flash Memory Devices-Reference-Cited by-同舟云学术

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Dependence of Electrical Characteristics on the Depth of the Recess Region in the Scaled Tantalum Nitride–Aluminum Oxide–Silicon Nitride–Silicon Oxide–Silicon Flash Memory Devices

Published:2011-12-01 Issue:12R Volume:50 Page:124202
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jang Sang Hyun,Jin Jun,Kim Kyoung Won,Kim Hyun Woo,You Joo Hyung,Lee Keun Woo,Kim Tae Whan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference20 articles.

1. A Novel nand Flash Memory With Asymmetric S/D Structure Using Fringe-Field-Induced Inversion Layer

2. Fin Width $(W_{\rm fin})$ Dependence of Programming Characteristics on a Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS Device for a NOR-Type Flash Memory Device

3. A 125-mm/sup 2/ 1-Gb NAND flash memory with 10-MByte/s program speed

4. Design of Unique NAND Flash Memory Cells with Low Program Disturbance Utilizing Novel Booster Line

5. Flash Memory Device with `I' Shape Floating Gate for Sub-70 nm NAND Flash Memory

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