Growth of High-Quality In$_{0.4}$Ga$_{0.6}$N Film on Si Substrate by Metal Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Growth of High-Quality In$_{0.4}$Ga$_{0.6}$N Film on Si Substrate by Metal Organic Chemical Vapor Deposition

Published:2011-10-25 Issue:11 Volume:4 Page:115501
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Tran Binh-Tinh,Chang Edward-Yi,Lin Kung-Liang,Wong Yuen-Yee,Sahoo Kartika Chandra,Lin Hsiao-Yu,Huang Man-Chi,Nguyen Hong-Quan,Lee Ching-Ting,Trinh Hai-Dang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=11/a=115501/pdf

Reference13 articles.

1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

2. Photoconductive ultraviolet sensor using Mg‐doped GaN on Si(111)

3. Solid phase immiscibility in GaInN

4. Surface roughness induced phase‐separation in InGaN and LED applications

5. Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer

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