Toward Engineering Modeling of Negative Bias Temperature Instability
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Publisher
CRC Press
Link
http://www.crcnetbase.com/doi/pdf/10.1201/9781420043778.ch14
Reference75 articles.
1. Source: From Grasser, et al. Proc. IPRS., 2007, With permission.
2. Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure
3. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
4. Negative bias temperature instability: What do we understand?
5. Krishnan, A.T. et al., Material dependence of hydrogen diffusion: Implications for NBTI degradation, inProc. IEDM, Washington, Washington D.C., 2005, pp.688-691.
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