Material dependence of hydrogen diffusion: implications for NBTI degradation-Reference-Cited by-同舟云学术

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Material dependence of hydrogen diffusion: implications for NBTI degradation

Published: Issue: Volume: Page:
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Container-title:IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
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Author:

Krishnan A.T.,Chancellor C.,Chakravarthi S.,Nicollian P.E.,Reddy V.,Varghese A.,Khamankar R.B.,Krishnan S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10701/33791/01609445.pdf?arnumber=1609445

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique;Russian Microelectronics;2023-10

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4. Aging-Aware Task Scheduling for Mesh-Based Network-on-Chips Under Aging Effect;Journal of Circuits, Systems and Computers;2019-08

5. Impact of Aging on the Reliability of Delay PUFs;Journal of Electronic Testing;2018-08-20

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