Modeling of asymmetric degradation based on a non-uniform electric field and temperature in amorphous In–Ga–Zn–O thin film transistors-Reference-Cited by-同舟云学术

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Modeling of asymmetric degradation based on a non-uniform electric field and temperature in amorphous In–Ga–Zn–O thin film transistors

Published:2017-02-10 Issue:3 Volume:32 Page:035017
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kim Jong In,Jeong Chan-Yong,Kwon Hyuck-In,Jung Keum Dong,Park Mun Soo,Kim Ki Hwan,Seo Mi Seon,Lee Jong-Ho

Funder

Samsung Display Company, Ltd.

National Research Foundation of Korea

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/32/i=3/a=035017/pdf

Reference28 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. 21.1:Invited Paper: Technological Progress and Commercialization of OLED TV

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors

5. Review of Present Reliability Challenges in Amorphous In-Ga-Zn-O Thin Film Transistors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors;Micromachines;2021-03-19

2. Dynamic Analysis of the Negative OFF-State Current in Thin-film Transistors;IEEE Transactions on Electron Devices;2019-12

3. Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors;Materials;2019-09-26

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