EUV Resists: Pushing to the Extreme

Author:

Naulleau Patrick1,Anderson Christopher1,Chao Weilun1,Bhattarai Suchit2,Neureuther Andrew2,Cummings Kevin3,Jen Shi-Hui3,Neisser Mark3,Thomas Bryan3

Affiliation:

1. Center for X-ray Optics, Lawrence Berkeley National Laboratory

2. EECS, University of California

3. SEMATECH

Publisher

Technical Association of Photopolymers, Japan

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Reference12 articles.

1. 1. C. Anderson, D. Ashworth, L. Baclea-An, S. Bhattari, R. Chao, R. Claus, P. Denham, K. Goldberg, A. Grenville, G. Jones, R. Miyakawa, K. Murayama, H. Nakagawa, S. Rekawa, J. Stowers, P. Naulleau, “The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm,” Proc. SPIE, 8322, (2012) 832212.

2. 2. Y. Tanaka, K. Matsunaga, S. Magoshi, S. Shirai, K. Tawarayama, and H. Tanaka, “Resolution capability of SFET with slit and dipole illumination,” Proc. SPIE, 7969 (2011) 79690Q.

3. 3. J. Chun, S. Jen, K. Petrillo, C. Montgomery, D. Ashworth, M. Neisser, T. Saito, L. Huli, D. Hetzer, “SEMATECH’s Cycles of Learning Test for EUV Photoresist and its applications for Process Improvement,” Proc. SPIE, 9048 (2014) 90481Z.

4. 4. K. Cummings, D. Ashworth, M. Bremer, R. Chin, Y. Fan, L. Girard, H. Glatzel, M. Goldstein, E. Gullikson, J. Kennon, B. Kestner, L. Marchetti, P. Naulleau, R. Soufli, J. Bauer, M. Mengel, J. Welker, M. Grupp, E. Sohmen, S. Wurm, “Update on the SEMATECH 0.5 NA extreme-ultraviolet lithography (EUVL) microfield exposure tool (MET)”, Proc. SPIE, 9048 (2014) 90481M.

5. 5. H. Glatzel, D. Ashworth, D. Bajuk, M. Bjork, M. Bremer, R. Chin, M. Cordier, K. Cummings, L. Girard, M. Goldstein, E. Gullikson, R. Hudyma, J. Kennon, R. Kestner, L. Marchetti, K. Nouri, P. Naulleau, R. Soufli, E. Spiller, D. Pierce, “Projection optics for EUVL microfield exposure tools with 0.5 NA”, Proc. SPIE, 9048 (2014) 90481K.

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