Atomic Layer Deposition of Hafnium Silicate from HfCl[sub 4], SiCl[sub 4], and H[sub 2]O-Reference-Cited by-同舟云学术

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Atomic Layer Deposition of Hafnium Silicate from HfCl[sub 4], SiCl[sub 4], and H[sub 2]O

Published:2007 Issue:5 Volume:10 Page:H149
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Fedorenko Y.,Swerts J.,Maes J. W.,Tois E.,Haukka S.,Wang C.-G.,Wilk G.,Delabie A.,Deweerd W.,De Gendt S.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference31 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. M. Ritala , in High-k Gate dielectrics , M. Houssa , Editor, p. 64, IOP, London (2004).

3. Island growth as a growth mode in atomic layer deposition: A phenomenological model

4. HfSiO[sub 4] Dielectric Layers Deposited by ALD Using HfCl[sub 4] and NH[sub 2](CH[sub 2])[sub 3]Si(OC[sub 2]H[sub 5])[sub 3] Precursors

5. Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

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1. Growth mechanism of HfO2 film on H-terminated Si (100) surface from atomic layer deposition process using tetrakis(ethylmethylamino)hafnium;Surfaces and Interfaces;2024-10

2. Chemisorption and Surface Reaction of Hafnium Precursors on the Hydroxylated Si(100) Surface;Coatings;2023-12-16

3. A theoretical study of the atomic layer deposition of HfO2 on Si(1 0 0) surfaces using tetrakis(ethylmethylamino) hafnium and water;Applied Surface Science;2023-03

4. Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO2 films obtained from metal halide and amide precursors;Journal of Materials Chemistry C;2018

5. Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 °C) by Al2O3 incorporation;Applied Surface Science;2016-05

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