MOCVD Regrowth of InP on Hybrid Silicon Substrate-Reference-Cited by-同舟云学术

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MOCVD Regrowth of InP on Hybrid Silicon Substrate

Published:2013-08-30 Issue:11 Volume:2 Page:Q82-Q86
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Zhang C.,Liang D.,Bowers J. E.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of telecom C-band In(Ga)As quantum dots for silicon quantum photonics;Materials for Quantum Technology;2024-02-13

2. Silicon Quantum Photonics ‐ Platform and Applications;Photonic Quantum Technologies;2023-05-05

3. Improved fabrication of scalable hybrid silicon nitride–thin-film lithium niobate electro-optic modulators;Journal of the Optical Society of America B;2023-02-27

4. Dislocation Formation and Filtering in III–V Regrowth on GaAs Bonded on Si;Crystal Growth & Design;2022-09-02

5. Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator;Journal of Lightwave Technology;2022-08-15

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