Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator-Reference-Cited by-同舟云学术

Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator

Published:2022-08-15 Issue:16 Volume:40 Page:5631-5635
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Li Jie¹^ORCID,Xue Ying¹^ORCID,Lin Liying¹,Xing Zengshan²,Wong Kam Sing²,Lau Kei May¹^ORCID

Affiliation:

1. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong

2. Department of Physics and William Mong Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Kowloon, Hong Kong

Funder

Research Grants Council, University Grants Committee

Innovation and Technology Fund

William Mong Institute of Nano Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/50/9846916/09794450.pdf?arnumber=9794450

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