Dislocation Formation and Filtering in III–V Regrowth on GaAs Bonded on Si-Reference-Cited by-同舟云学术

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Dislocation Formation and Filtering in III–V Regrowth on GaAs Bonded on Si

Published:2022-09-02 Issue:10 Volume:22 Page:5852-5860
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Hughes Eamonn T.¹^ORCID,Dumont Mario²,Hu Yingtao³,Liang Di³,Beausoleil Raymond G.³,Bowers John E.²,Mukherjee Kunal⁴^ORCID

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, United States

2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, United States

3. Hewlett Packard Labs, Hewlett Packard Enterprise, 820 N. McCarthy Blvd., Milpitas, California 95035, United States

4. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

Funder

Advanced Research Projects Agency - Energy

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c00309

Reference30 articles.

1. Alduino, A.; Liao, L.; Jones, R.; Morse, M.; Kim, B.; Lo, W. Z.; Basak, J.; Koch, B.; Liu, H. F.; Rong, H.; Sysak, M.; Krause, C.; Saba, R.; Lazar, D.; Horwitz, L.; Bar, R.; Litski, S.; Liu, A.; Sullivan, K.; Dosunmu, O.; Na, N.; Yin, T.; Haubensack, F.; Hsieh, I. W.; Heck, J.; Beatty, R.; Park, H.; Bovington, J.; Lee, S.; Nguyen, H.; Au, H.; Nguyen, K.; Merani, P.; Hakami, M.; Paniccia, M. Demonstration of a High Speed 4-Channel Integrated Silicon Photonics WDM Link with Hybrid Silicon Lasers. OSA Tech. Dig. (Opt. Soc. Am. 2010) Integrated Photonics Research, Silicon and Nanophotonics and Photonics in Switching, 2010; pp 4–6.

2. Perspective on the future of silicon photonics and electronics

3. Perspective: The future of quantum dot photonic integrated circuits

4. Photonic Integrated Circuits Using Heterogeneous Integration on Silicon

5. An advanced III-V-on-silicon photonic integration platform

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1. Revealing the mechanism of interfacial adhesion enhancement between the SiO2 film and the GaAs substrate via plasma pre-treatments;Journal of Vacuum Science & Technology A;2024-02-29

2. Growth of telecom C-band In(Ga)As quantum dots for silicon quantum photonics;Materials for Quantum Technology;2024-02-13

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