Author:
Machida Katsuyuki,Konishi Toshifumi,Yamane Daisuke,Toshiyoshi Hiroshi,Masu Kazuya
Abstract
The paper reports a feature and techniques to resolve requirements of integrated CMOS-MEMS technology. The multiphysics simulation platform for this technology has been developed to understand simultaneously both the mechanical and electrical behaviors of MEMS stacked on LSI. An equivalent circuit of a MEMS accelerometer has been developed with an electrical circuit simulator. We review the technology for CMOS-MEMS accelerometer with a wide detection range. Using the simulation platform above, we investigated the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto CMOS circuit. As a result, it is confirmed that integrated CMOS-MEMS technology will shed light on a solution of More than Moore technical trends.
Publisher
The Electrochemical Society
Cited by
22 articles.
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