Penetration of Copper-Manganese Self-Forming Barrier into SiO2Pore-Sealed SiCOH during Deposition-Reference-Cited by-同舟云学术

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Penetration of Copper-Manganese Self-Forming Barrier into SiO2Pore-Sealed SiCOH during Deposition

Published:2013 Issue:9 Volume:2 Page:N175-N178
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Borja Juan,Plawsky Joel. L.,Gill William N.,Bakhru Hassaram,He Ming,Lu Toh-Ming

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference17 articles.

1. He M. Lu T.-M. , Metal-Dielectric Interfaces in Gigascale Electronics: Thermal and Electrical Stability (Springer, New York, 2011), p. 91.

2. Capacitance–voltage, current–voltage, and thermal stability of copper alloyed with aluminium or magnesium

3. Evolution of the Cu-Al Alloy/SiO[sub 2] Interfaces during Bias Temperature Stressing

4. Bias-temperature stability of the Cu(Mg)/SiO[sub 2]/p-Si metal-oxide-semiconductor capacitors

5. Thermal Stability Enhancement of Cu Interconnects by Employing a Self-aligned MgO Layer Obtained From a Cu(Mg) Alloy Film

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and simulation of Cu diffusion and drift in porous CMOS backend dielectrics;APL Materials;2018-06

2. Modeling and Simulation of Cu Drift in Porous Low-k Dielectrics;ECS Transactions;2017-08-16

3. Modeling and Simulation of Cu Diffusion in Porous Low-k Dielectrics;ECS Transactions;2017-04-26

4. Electroless plating of low-resistivity Cu–Mn alloy thin films with self-forming capacity and enhanced thermal stability;Journal of Alloys and Compounds;2015-11

5. Current leakage relaxation and charge trapping in ultra-porous low-kmaterials;Journal of Applied Physics;2014-02-28

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