Modeling and simulation of Cu diffusion and drift in porous CMOS backend dielectrics
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA
2. Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124, USA
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5021032
Reference19 articles.
1. On the origin and application of the Bruggeman correlation for analysing transport phenomena in electrochemical systems
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4. Study of Cu diffusion in porous dielectrics using secondary-ion-mass spectrometry
5. Penetration of Copper-Manganese Self-Forming Barrier into SiO2Pore-Sealed SiCOH during Deposition
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