Compositional Variation of Metallorganic Chemically Vapor Deposited SrTiO[sub 3] Thin Films along the Capacitor Hole Having a Diameter of 0.15 μm-Reference-Cited by-同舟云学术

Compositional Variation of Metallorganic Chemically Vapor Deposited SrTiO[sub 3] Thin Films along the Capacitor Hole Having a Diameter of 0.15 μm

Published:2001 Issue:11 Volume:148 Page:G636
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Hwang Cheol Seong,Park Jaehoo,Hwang Doo Sup,Yoo Cha Young

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference14 articles.

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2. K. Hieda, K. Eguchi, J. Nakahira, M. Kiyotoshi, M. Nakabayashi, H. Tomita, M. Izuha, T. Aoyama, S. Niwa, K. Tsunoda, S. Yamazaki, J. Lin, A. Shimada, K. Nakamura, T. Kubota, M. Asano, K. Hosaka, Y. Fukuzimi, Y. Ishibashi, and Y. Kohyama, inProceedings of the International Electron Devices Meeting, IEEE, p. 789 (1999).

3. J. W. Kim, S. D. Nam, S. H. Lee, S. J. Won, W. D. Kim, C. Y. Yoo, Y. W. Park, S. I. Lee, and M. Y. Lee, inProceedings of the International Electron Devices Meeting, IEEE, p. 793 (1999).

4. Preparation and Electrical Properties ofSrTiO3Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)

5. Accommodation of excess Ti in a (Ba, Sr)TiO3 thin film with 53.4% Ti grown on Pt/SiO2/Si by metalorganic chemical-vapor deposition

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