Chemical Vapor Deposition and Electrode Technologies for (Ba,Sr)TiO3 Capacitor Used in Gigabit Dram-Reference-Cited by-同舟云学术

Chemical Vapor Deposition and Electrode Technologies for (Ba,Sr)TiO3 Capacitor Used in Gigabit Dram

Published:1999 Issue: Volume:596 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Eguchi K.,Hieda K.,Nakahira J.,Kiyotoshi M.,Nakabayashi M.,Yamazaki S.,Izuha M.,Aoyama T.,Tsunoda K.,Lin J.,Nakamura K.,Niwa S.,Tomita H.,Shimada A.,Kohyama Y.,Ishibashi Y.,Fukuzumi Y.,Arikado T.,Okumura K.

Abstract

AbstractWe review our capacitor technology using (Ba,Sr)TiO3 (BST) as a capacitor dielectric for dynamic random access memory (DRAM) application. Among a number of issues for BST capacitor process integration in DRAM cells, two important technologies are discussed. As an electrode technology, we propose All PErovskite Capacitor (APEC) technology, in which conducting perovskite oxide of SrRuO3 (SRO) is used as capacitor electrodes. For chemical vapor deposition (CVD) of BST, we propose In-situ Multi-Step (IMS) process, which is a sequential repetition of low temperature deposition of ultra thin BST film and crystallization in the same chamber. By using APEC technology and IMS CVD process of BST, we can simultaneously achieve good electrical characteristics (low leakage current and high permittivity) and good step coverage. The combination of APEC technology and IMS CVD process of BST is a promising BST capacitor process technology for future DRAMs.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference8 articles.

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1. Compositional Variation of Metallorganic Chemically Vapor Deposited SrTiO[sub 3] Thin Films along the Capacitor Hole Having a Diameter of 0.15 μm;Journal of The Electrochemical Society;2001