The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO[sub x]N[sub y] Gate Dielectrics-Reference-Cited by-同舟云学术

The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO[sub x]N[sub y] Gate Dielectrics

Published:2010 Issue:9 Volume:13 Page:G71
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Jung Hyung-Suk,Park Jung-Min,Kim Hyo Kyeom,Kim Jeong Hwan,Won Seok-Jun,Lee Joohwi,Lee Sang Young,Hwang Cheol Seong,Kim Weon-Hong,Song Min-Woo,Lee Nae-In,Cho Deok-Yong

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference11 articles.

1. Review on high-k dielectrics reliability issues

2. Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations

3. Hafnium zirconate gate dielectric for advanced gate stack applications

4. The Electrical and Material Characterization of Hafnium Oxynitride Gate Dielectrics With TaN-Gate Electrode

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