Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
http://stacks.iop.org/1757-899X/229/i=1/a=012018/pdf
Reference32 articles.
1. Nanoscale germanium MOS Dielectrics-part II: high-/spl kappa/ gate dielectrics
2. High-k/Ge MOSFETs for future nanoelectronics
3. Interface control of high-k gate dielectrics on Ge
4. Sputter-Deposited La2O3on p-GaAs for Gate Dielectric Applications
5. Scalability and Electrical Properties of Germanium Oxynitride MOS Dielectrics
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3. Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment;Applied Surface Science;2019-11
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