Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations-Reference-Cited by-同舟云学术

Dependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations

Published:2008-09 Issue:5 Volume:104 Page:054101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Park Tae Joo,Kim Jeong Hwan,Jang Jae Hyuck,Na Kwang Duk,Hwang Cheol Seong,Yoo Jeong Ho

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2973674

Reference22 articles.

1. Hafnium and zirconium silicates for advanced gate dielectrics

2. Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition

3. Boron penetration studies from p+ polycrystalline Si through HfSixOy

4. Band offsets of wide-band-gap oxides and implications for future electronic devices

5. Application of HfSiON as a gate dielectric material

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