Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers-Reference-Cited by-同舟云学术

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Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers

Published:2019 Issue:7 Volume:8 Page:Q3159-Q3164
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Yang Jiancheng,Fares Chaker^ORCID,Elhassani Randy,Xian Minghan,Ren Fan^ORCID,Pearton S. J.^ORCID,Tadjer Marko^ORCID,Kuramata Akito

Funder

DTRA

DOD | Office of Naval Research

DOD | ONR | Office of Naval Research Global

New Energy and Industrial Technology Development Organisation

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference59 articles.

1. Power Semiconductor Devices for Smart Grid and Renewable Energy Systems

2. Review of Silicon Carbide Power Devices and Their Applications

3. The 2018 GaN power electronics roadmap

4. GaN Technology for Power Electronic Applications: A Review

5. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

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1. Switching of kV-class Ga2O3 heterojunction vertical rectifiers;Journal of Vacuum Science & Technology A;2024-08-01

2. Heated-H3PO4 etching of (001) β-Ga2O3;Applied Physics Letters;2024-07-01

3. High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes;Journal of Vacuum Science & Technology A;2024-07-01

4. A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination;Nanomaterials;2024-06-05

5. A Review of β-Ga2O3 Power Diodes;Materials;2024-04-18

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