Investigations on In[sub 0.45]Al[sub 0.55]As∕In[sub x]Ga[sub 1−x]As Metamorphic High-Electron-Mobility Transistors with Double Gate-Recess and SiN[sub x] Passivation-Reference-Cited by-同舟云学术

Investigations on In[sub 0.45]Al[sub 0.55]As∕In[sub x]Ga[sub 1−x]As Metamorphic High-Electron-Mobility Transistors with Double Gate-Recess and SiN[sub x] Passivation

Published:2009 Issue:5 Volume:156 Page:H367
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lee Ching-Sung,Hsu Wei-Chou,Ho Chiu-Sheng,Kao An-Yung

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors

2. Low-frequency noise characteristics of metamorphic In0.52Al0.48As/In0.60Ga0.40As double-heterostructure pseudomorphic high electron mobility transistors grown on a GaAs substrate

3. H. S. Yoon, J. H. Lee, J. Y. Shim, S. J. Kim, D. M. Kang, J. Y. Hong, W. J. Chang, and K. H. Lee , inProceedings of the Conference on Indium Phosphide and Related Materials, IEEE, p. 201 (2002).

4. Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation‐doped In0.3Ga0.7As/In0.29Al0.71As heterostructures

5. Material properties of compositional graded InxGa1−xAs and InxAl1−xAs epilayers grown on GaAs substrates

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1. Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation;Superlattices and Microstructures;2014-08

2. Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess;ECS Solid State Letters;2012-12-05

3. Comprehensive Temperature-Dependent Studies of Metamorphic High Electron Mobility Transistors With Double and Single $\delta$-Doped Structures;IEEE Transactions on Electron Devices;2011-12

4. On an Electroless-Plating (EP) Gate Metamorphic Transistor;Electrochemical and Solid-State Letters;2011-01-01

5. Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess;Applied Physics Letters;2010-05-17