Charge Trapping and Detrapping in nc-RuO Embedded ZrHfO High-k Thin Film for Nonvolatile Memory Applications-Reference-Cited by-同舟云学术

Charge Trapping and Detrapping in nc-RuO Embedded ZrHfO High-k Thin Film for Nonvolatile Memory Applications

Published:2012 Issue:3 Volume:159 Page:H214-H219
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lin Chen-Han,Kuo Yue

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications

2. Metal Nanocrystal Memory With High-<tex>$kappa$</tex>Tunneling Barrier for Improved Data Retention

3. Nanocrystalline Silicon Embedded Zirconium-Doped Hafnium Oxide High-kMemory Device

4. Theoretical and experimental investigation of Si nanocrystal memory device with HfO/sub 2/ high-k tunneling dielectric

5. Sub 2 nm Thick Zirconium Doped Hafnium Oxide High-K Gate Dielectrics

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