Electrical properties of nano-resistors made from the Zr-doped HfO2high-kdielectric film
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/aaa9d3/pdf
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1. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS
2. InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
3. A light emitting device made from thin zirconium-doped hafnium oxide high-k dielectric film with or without an embedded nanocrystal layer
4. Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device
5. Solid State Incandescent Light Emitting Device Made of WOx Embedded Zr-Doped HfO2 High-k Stack on Si
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