Pore Sealing by NH[sub 3] Plasma Treatment of Porous Low Dielectric Constant Films-Reference-Cited by-同舟云学术

Pore Sealing by NH[sub 3] Plasma Treatment of Porous Low Dielectric Constant Films

Published:2007 Issue:4 Volume:154 Page:G85
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Peng Hua-Gen,Chi Dong-Zhi,Wang Wei-De,Li Jing-Hui,Zeng Kai-Yang,Vallery Richard S.,Frieze William E.,Skalsey Mark A.,Gidley David W.,Yee Albert F.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference61 articles.

1. Intercalation of nitrogenous substances into HUO2PO4·4H2O

2. Low dielectric constant materials for microelectronics

3. Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: A comparative study

4. Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization

5. Plasma-enhanced chemical vapor deposition of low-kdielectric films using methylsilane, dimethylsilane, and trimethylsilane precursors

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