Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing-Reference-Cited by-同舟云学术

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

Published:2014 Issue:5 Volume:3 Page:Q95-Q98
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Ahn Byung Du,Kim Hyun-Suk,Yun Dong-Jin,Park Jin-Seong,Kim Hyun Jae

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

2. Overview of electroceramic materials for oxide semiconductor thin film transistors

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

5. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors

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5. Suppressing Undesired Channel Length‐Dependent Electrical Characteristics of Fully Integrated InGaZnO Thin‐Film Transistors via Defect Control Layer;Advanced Electronic Materials;2022-11-10