Author:
Yan Yan,Zhang Bin,Deng Hao,Chen Liang,Xiao Lihong,Zhang BeiChao,Chen Yingjie
Abstract
In this work, we report the application of flowable chemical vapor deposition (FCVD) technology in sub-20nm devices and flash devices. FCVD displays a strong ability in filling the gap of not only high aspect ratio straight vertical trench, but also re-entrant narrow profile as well as small horizontal trench. Through optimizing the annealing conditions, the as-obtained FCVD film can fully satisfy both the STI and ILD requirements which have different thermal budget. The FCVD oxide film also shows a better WET resistance than HARP film does.
Publisher
The Electrochemical Society
Cited by
7 articles.
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