Using water structuring by ions to address pattern loading in wet HF-based oxide recess etch-Reference-Cited by-同舟云学术

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Using water structuring by ions to address pattern loading in wet HF-based oxide recess etch

Published:2023-07 Issue: Volume:279 Page:112058
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Vereecke Guy,De Coster Hanne,Dochain Denis,Nurekeyeva Kunsulu,Conlan Shona,Nsimba Anthony,Wostyn Kurt,Sanchez Efrain Altamirano

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Effect of low temperature anneals and nonthermal treatments on the properties of gap fill oxides used in SiGe and III-V devices

2. Flowable CVD Process Application for Gap Fill at Advanced Technology

3. Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region

4. Surface Preparation & Cleaning Conference (SPCC 2019), April 2-3, 2019, Portland, Oregon;Vereecke,2019

5. NMR Study of Water Molecules Confined in Extended Nanospaces

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