Effect of Bias Frequency on Bottom-Up SiO<sub>2</sub> Gap-Filling Using Plasma-Enhanced Atomic Layer Deposition-Reference-Cited by-同舟云学术

Effect of Bias Frequency on Bottom-Up SiO₂ Gap-Filling Using Plasma-Enhanced Atomic Layer Deposition

Published:2024-07-29 Issue:31 Volume:16 Page:41642-41652
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Shin Ye Ji¹^ORCID,Kim Ho Gon¹,Choi Seung Yup¹,Kim Seo Min²,Kang Ji Eun¹,Han Hye Won³,Kim Ji Min³,Kim Geun Hwi¹,Yeom Geun Young¹⁴^ORCID

Affiliation:

1. Department of Advanced Materials and Science Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea

2. School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea

3. Department of Semiconductor Convergence Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea

4. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c06106

Reference22 articles.

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5. Tilke, A.; Culmsee, M.; Jaiswal, R.; Hampp, R.; Conti, R.; Galiano, M.; Stapelmann, C.; Wille, W.; Jain, A. STI Gap-fill technology with High Aspect ratio process for 45nm CMOS and beyond. In The 17th Annual SEMI/IEEE ASMC 2006 Conference, 2006; IEEE: pp 71–76.