Author:
Heumann F. K.,Brown D. M.,Mets E.
Abstract
A qualitative study of the masking properties of thin (≤1500Aå) silicon nitride and silicon oxynitride films on Si is presented. A range of diffusion conditions was studied for doping sources including B, P, Ga, and As. Silicon nitride was not found to be a diffusion mask for all conditions. Conditions under which it can be expected to mask are specified.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Cited by
30 articles.
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