Compositional and structural studies of amorphous silicon-nitrogen alloys deposited at room temperature using a sputtering-type electron cyclotron resonance microwave plasma-Reference-Cited by-同舟云学术

Compositional and structural studies of amorphous silicon-nitrogen alloys deposited at room temperature using a sputtering-type electron cyclotron resonance microwave plasma

Published:1999-01 Issue:1 Volume:79 Page:137-148
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Liu Y. C.¹,Furukawa K.²,Nakashima H.²,Kashiwazaki Y.³,Gao D. W.³,Uchino K.³,Muraoka K.³,Tsuzuki H.⁴

Affiliation:

1. a Institute of Theoretical Physics , Northeast Normal University , Changchun , 130024 , PR , China

2. b Advanced Science and Technology Center for Cooperative Research , Kyushu University , Kasuga , Fukuoka , 816 , Japan

3. c Department of Energy Conversion Engineering , Kyushu University , Kasuga , Fukouoka , 816 , Japan

4. d Center of Advanced Instrumental Analysis , Kyushu University , Kasuga , Fukuoka , 816 , Japan

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819908206788

Reference36 articles.

1. Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition

2. Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects

3. Configurational statistics ina-SixNyHzalloys: A quantitative bonding analysis

4. The Preparation and Properties of Amorphous Silicon Nitride Films

5. Optical properties of amorphous SiNx(:H) films

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of substrate bombardment on sputtered a-Si:N thin film properties;Physica B: Condensed Matter;2005-01

2. Preparation and characterization of TiN films by electron cyclotron resonance (ECR) sputtering for diffusion barrier applications;Materials Science and Engineering: B;2001-06

3. Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma;Japanese Journal of Applied Physics;1999-08-15