Chapter 1 Silica, silicon nitride and oxynitride thin films-Reference-Cited by-同舟云学术

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Chapter 1 Silica, silicon nitride and oxynitride thin films

Published:1999 Issue: Volume: Page:3-144
ISSN:1874-5903
Container-title:New Insulators, Devices and Radiation Effects
language:
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Author:

Balland B.,Glachant A.

Publisher

Elsevier

Reference366 articles.

1. Stabilization of Silicon Surfaces by Thermally Grown Oxides*

2. Physics of Semiconductor devices;Grove,1967

3. The Theory and Practice of Microelectronics;Ghandhi,1968

4. VLSI Fabrication Principles;Ghandhi,1983

5. MOS (Metal Oxide Semiconductor) Physics and Technology;Nicollian,1982

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1. Engineering the Outcoupling Pathways in Plasmonic Tunnel Junctions via Photonic Mode Dispersion for Low-Loss Waveguiding;ACS Nano;2023-12-26

2. Direct View of Phonon Dynamics in Atomically Thin MoS₂;Nano Letters;2022-06-07

3. A Study on the Electronic Properties of SiOxNy/p-Si Interface;Silicon;2018-04-12

4. Bonding Behavior and Chemical Stability of Silica-Based Nanotubes and Their 3D Assembly;The Journal of Physical Chemistry C;2014-04-15

5. Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx;Solid-State Electronics;2001-08

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