Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx-Reference-Cited by-同舟云学术

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Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx

Published:2001-08 Issue:8 Volume:45 Page:1265-1270
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Pic N.,Glachant A.,Nitsche S.,Hoarau J.Y.,Goguenheim D.,Vuillaume D.,Sibai A.,Chaneliere C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Balland B, Glachant A. Silica, silicon nitride and oxynitride thin films, vol. 3. An overview of fabrication techniques, properties and applications. In: Barbottin G, Vapaille A, editors. Instabilities in silicon devices (Silicon passivation and related instabilities). Amsterdam: Elsevier; 1999. p. 3–144

2. Thermal nitridation of Si(111) by nitric oxide;Wiggins;J Vac Sci Technol,1981

3. Electronic structure of a heterostructure of an alkylsiloxane self-assembled monolayer on silicon;Vuillaume;Phys Rev B,1998

4. Suppression of charge carrier tunneling through organic self-assembled monolayers;Boulas;Phys Rev Lett,1996

5. Organic insulating films at nanometer thickness;Vuillaume;Appl Phys Lett,1996

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1. Structural, electronic and energetic properties of water adsorbed on β-Si3N4 (0001) surface: First-principles calculations;Surface Science;2010-03

2. Theoretical study of the electronic structure of the Si3N4(0 0 0 1) surface;Surface Science;2005-03

3. Preparation and properties of clean Si3N4 surfaces;Applied Surface Science;2004-08

4. Determination of effective electron inelastic mean free paths in SiO2 and Si3N4 using a Si reference;Surface Science;2003-10

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