Chemical Interactions and Mechanisms of Different pH Regulators on Copper and Cobalt Removal Rate of Copper Film CMP for GLSI
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference41 articles.
1. Investigation of cu-BTA complex formation during Cu chemical mechanical planarization process
2. Effect of Chelating Agent and Ammonium Dodecyl Sulfate on the Interfacial Behavior of Copper CMP for GLSI
3. Effect of nitridation surface treatment on silicon (1 1 1) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD
4. Removal rate and surface quality of the GLSI silicon substrate during the CMP process
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