Effects of Growth Kinetics and Surface Emissivity on Chemical Vapor Deposition of Silicon in a Lamp-Heated Single-Wafer Reactor-Reference-Cited by-同舟云学术

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Effects of Growth Kinetics and Surface Emissivity on Chemical Vapor Deposition of Silicon in a Lamp-Heated Single-Wafer Reactor

Published:2001 Issue:11 Volume:4 Page:G98
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Pejnefors J.,Zhang S.-L.,Radamsson H. H.,Östling M.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference14 articles.

1. Kinetics of silicon epitaxy using SiH4in a rapid thermal chemical vapor deposition reactor

2. Kinetics of surface reactions in very low‐pressure chemical vapor deposition of Si from SiH4

3. The deposition of silicon from silane in a low-pressure hot-wall system

4. Chemical Vapor Deposition of Epitaxial Silicon from Silane at Low Temperatures: I . Very Low Pressure Deposition

5. Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

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1. Epitaxial Growth of Planar Hutwires on Silicon‐on‐Insulator Substrates;physica status solidi (a);2022-05-27

2. Growth kinetics of SiGe/Si superlattices on bulk and silicon-on-insulator substrates for multi-channel devices;Journal of Crystal Growth;2009-05

3. Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors;Journal of Crystal Growth;2005-09

4. Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains;Journal of Crystal Growth;2004-03

5. Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates;Journal of Crystal Growth;2003-09

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