(Invited) Growth and Characterization ofα-,β-, andε-Ga2O3Epitaxial Layers on Sapphire-Reference-Cited by-同舟云学术

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(Invited) Growth and Characterization ofα-,β-, andε-Ga2O3Epitaxial Layers on Sapphire

Published:2017-08-17 Issue:7 Volume:80 Page:191-196
ISSN:1938-6737
Container-title:ECS Transactions
language:en
Short-container-title:ECS Trans.

Author:

Yao Yao^ORCID,Lyle Luke A. M.,Rokholt Johanne A.,Okur Serdal^ORCID,Tompa Gary S.,Salagaj Tom,Sbrockey Nick,Davis Robert F.^ORCID,Porter Lisa M.^ORCID

Publisher

The Electrochemical Society

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Proton Irradiation Effects in MOCVD Grown β-Ga₂O₃ and ε-Ga₂O₃ Thin Films;IEEE Transactions on Nuclear Science;2024-01

2. Ga2O3 nanorods synthesized by hydrothermal method for dual-functional sensing of pH value and glucose;Sensors and Actuators A: Physical;2023-12

3. A Novel Method for Growing α-Ga2O3 Films Using Mist-CVD Face-to-face Heating Plates;Nanomaterials;2022-12-23

4. Critical review of Ohmic and Schottky contacts to β-Ga₂O₃;Journal of Vacuum Science & Technology A;2022-12

5. Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface;ACS Applied Electronic Materials;2022-08-30

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