Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin Films-Reference-Cited by-同舟云学术

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Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin Films

Published:2020-01-24 Issue:2 Volume:9 Page:024011
ISSN:2162-8777
Container-title:ECS Journal of Solid State Science and Technology
language:
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Shekhawat Aniruddh,Walters Glen,Chung Ching-Chang,Garcia Roberto,Liu Yang,Jones Jacob,Nishida Toshikazu,Moghaddam Saeed

Funder

US National Science Foundation

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/2162-8777/ab6b13/pdf

Reference59 articles.

1. Preparation and properties of highly (100)-oriented Pb(Zr0.2Ti0.8)O3 thin film prepared by rf magnetron sputtering with a PbOx buffer layer

2. NANO-phase SBT-family ferroelectric memories

3. Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition

4. Processing, Structure, Properties, and Applications of PZT Thin Films

5. Orientation dependence of dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3∕Pb(Zr0.2Ti0.8)O3 multilayered thin films

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1. Development of waste glass frits-based phosphor in glass system for solid-state lighting with high thermal stability;Bulletin of Materials Science;2024-07-23

2. High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films;Applied Physics Letters;2024-07-15

3. Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D‐STEM and Automated Diffraction Indexing;Small Methods;2024-05-16

4. Achieving High-Endurance Ferroelectricity in Hf_0.5Zr_0.5O₂ Thin Films on Ge Substrate through ZrO2 Interfacial Layer Induced Low-Temperature Annealing;IEEE Electron Device Letters;2024

5. On the Thickness Scaling of Ferroelectric Hafnia;IEEE Transactions on Materials for Electron Devices;2024

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