Preparation and properties of highly (100)-oriented Pb(Zr0.2Ti0.8)O3 thin film prepared by rf magnetron sputtering with a PbOx buffer layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2723190
Reference24 articles.
1. Ferroelectric Memories
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4. Lanthanum-substituted bismuth titanate for use in non-volatile memories
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2. Enhancements of the electrical properties in Pb1.25(Zr0.52,Ti0.48)O3/Pb1.1(Zr0.52,Ti0.48)O3 ferroelectric multilayered thin films;Materials Chemistry and Physics;2020-02
3. Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin Films;ECS Journal of Solid State Science and Technology;2020-01-24
4. Enhanced dielectric and piezoelectric properties of RF sputtered Pb(Zr0.60,Ti0.40)O3 thin films deposited on sol-gel derived Pb1+x(Zr0.40,Ti0.60)O3 seed layer with various lead contents;Journal of Alloys and Compounds;2019-10
5. Enhanced electrical and fatigue properties of La-modified (100)-oriented PZT thin films with various Zr/Ti ratio;Journal of Materials Science: Materials in Electronics;2019-01-02
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