Enhancements of the electrical properties in Pb1.25(Zr0.52,Ti0.48)O3/Pb1.1(Zr0.52,Ti0.48)O3 ferroelectric multilayered thin films-Reference-Cited by-同舟云学术

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Enhancements of the electrical properties in Pb1.25(Zr0.52,Ti0.48)O3/Pb1.1(Zr0.52,Ti0.48)O3 ferroelectric multilayered thin films

Published:2020-02 Issue: Volume:241 Page:122396
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Wang Xing,Qi Liping,Wang Licheng,Ding Fei,Li Biao,Chen Da,Zou Helin

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Preparation and properties of highly (100)-oriented Pb(Zr0.2Ti0.8)O3 thin film prepared by rf magnetron sputtering with a PbOx buffer layer;Wu;J. Appl. Phys.,2007

2. Hydrodynamic responses of a piezoelectric driven MEMS inkjet print-head;Kim;Sensor. Actuat. A-Phys.,2014

3. Hierarchically ordered nano-heterostructured PZT thin films with enhanced ferroelectric properties;Datta;Adv. Funct. Mater.,2014

4. High resolution X-ray and electron microscopy characterization of PZT thin films prepared by RF magnetron sputtering;Maurya;Appl. Surf. Sci.,2014

5. In situ growth of lead zirconate titanate thin films by hybrid process: sol–gel method and pulsed-laser deposition;Wang;Acta Mater.,2005

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1. Bipolar resistive switching characteristics of PbZrO3/LaNiO3 heterostructure thin films prepared by a sol–gel process;Ceramics International;2021-02

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