Time-Dependent Evolution Study of Ar/N2 Plasma-Activated Cu Surface for Enabling Two-Step Cu-Cu Direct Bonding in a Non-Vacuum Environment

Abstract

In this paper, a two-step copper-copper direct bonding process in a non-vacuum environment is reported. Time-dependent evolution of argon/nitrogen plasma-activated copper surface is carefully studied. A multitude of surface characterizations are performed to investigate the evolution of the copper surface, with and without argon/nitrogen plasma treatment, when it is exposed to the cleanroom ambient for a period of time. The results reveal that a thin layer of copper nitride is formed upon argon/nitrogen plasma activation on copper surface. It is hypothesized that the nitride layer could dampen surface oxidation. This allows the surface to remain in an “activated” state for up to 6 h. Afterwards, the activated dies are physically bonded at room temperature in cleanroom ambient. Thereafter, the bonded dies are annealed at 300 °C for varying duration, which results in an improvement of the bond strength by a factor of 70∼140 times. A sample bonded after plasma activation and 2-h cleanroom ambient exposure demonstrates the largest shear strength (∼5 MPa). The degradation of copper nitride layer at elevated temperature could aid in maintaining a localized inert environment for the initial diffusion of copper atoms across the interface. This novel bonding technique would be useful for high-throughput three-dimensional wafer bonding and heterogeneous packaging in semiconductor manufacturing.