Abstract
Tin (Sn)-doped beta phase gallium oxide (β-Ga2O3) nanostructures at different Sn concentrations (0 to 7.3 at%) are synthesized using a facile hydrothermal method. The Sn-doped β-Ga2O3 nanostructures are characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray powder diffraction, X-ray photoelectron spectroscopy, and absorbance spectroscopy. In addition, their photocatalytic activity is evaluated by observing methylene blue degradation under ultraviolet light (254 nm) irradiation. The photocatalytic activity of the Sn-doped (0.7 at%) β-Ga2O3 nanostructures is significantly enhanced compared to that of intrinsic β-Ga2O3 nanostructures due to the elevated charge separation. Excessive Sn concentrations (exceeding 2.2 at%) above the solid solubility limit of the Sn in β-Ga2O3 nanostructures lead to SnO2 and SnO precipitation. The presence of SnO2 and SnO degrades the photocatalytic efficiency in the β-Ga2O3 nanostructures. The results suggest new opportunities for the synthesis of highly effective β-Ga2O3-based photocatalysts for applications in environmental remediation, disinfection, and selective organic transformations.
Funder
National Research Foundation of Korea
Ministry of Science, ICT and Future Planning
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
40 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献