Growth of Tensile Strained Poly Germanium Thin Film on Glass Substrates by High Speed Continuous Wave Laser Annealing, and its Application to Germanium-Tin
Author:
Funder
Japan Society for the Promotion of Science
Murata Science Foundation
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/aba4f1/pdf
Reference29 articles.
1. Mobility of Electrons in Germanium-Silicon Alloys
2. Achieving direct band gap in germanium through integration of Sn alloying and external strain
3. Electronic properties of metastableGexSn1−xalloys
4. Possibility of increased mobility in Ge-Sn alloy system
5. Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy
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1. High Doping Activation (≥1020 cm–3) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing;ACS Applied Electronic Materials;2024-06-03
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4. Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing;Materials Science in Semiconductor Processing;2021-11
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