Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862659
Reference32 articles.
1. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys
2. Measurement of the direct energy gap of coherently strained SnxGe1−x/Ge(001) heterostructures
3. Determination of the optical energy gap of Ge1−xSnx alloys with 0
4. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy
5. GeSn p-i-n photodetector for all telecommunication bands detection
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