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Effects of Changes in Gas Type and Partial Pressure on Chemical Mechanical Polishing Property of Si Substrate

  • Published:2019 Issue:4 Volume:8 Page:P293-P297
  • ISSN:2162-8769
  • Container-title:ECS Journal of Solid State Science and Technology
  • language:en
  • Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Yin TaoORCID,Kitamura Kei,Doi Toshiro,Kurokawa Syuhei,Zhou Zhaozhong,Feng Kaiping

Funder

National Natural Science Foundation of China

Basic Public Welfare Research Projects of Zhejiang Province

Talent Development Projects of Quzhou University

Science and Technology Major Projects of Quzhou

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Alkali Metal Ion on Chemical Mechanical Polishing of LiTaO3;ECS Journal of Solid State Science and Technology;2022-03-01

2. Investigation of Particle Kinetic Energy for EKF-CMP Process;ECS Journal of Solid State Science and Technology;2021-07-01

3. A review: green chemical mechanical polishing for metals and brittle wafers;Journal of Physics D: Applied Physics;2021-07-01

4. Effect of Abrasive Particle Size Distribution on Removal Rate of Silicon Wafers;ECS Journal of Solid State Science and Technology;2020-11-30
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