Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials-Reference-Cited by-同舟云学术

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Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials

Published:2012-09 Issue: Volume:12 Page:S41-S46
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Aida Hideo,Doi Toshiro,Takeda Hidetoshi,Katakura Haruji,Kim Seong-Woo,Koyama Koji,Yamazaki Tsutomu,Uneda Michio

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference34 articles.

1. High-brightness in GaN blue, green and yellow light-emitting diodes with quantum well structures;Nakamura;Jpn. J. Appl. Phys.,1995

2. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C;Khan;Appl. Phys. Lett.,1985

3. Threading dislocations and optical properties of GaN and GaInN;Miyajima;Phys. Status Solidi B,2001

4. Chemical solution deposition derived buffer layers for MOCVD-grown GaN films;Puchinger;J. Cryst. Growth,2001

5. Present status and future prospect of widegap semiconductor high-power devices;Okumura;Jpn. J. Appl. Phys.,2006

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