Chemical solution deposition derived buffer layers for MOCVD-grown GaN films-Reference-Cited by-同舟云学术

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Chemical solution deposition derived buffer layers for MOCVD-grown GaN films

Published:2001-11 Issue:1-2 Volume:233 Page:57-67
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Puchinger Manfred,Wagner Thomas,Fini Paul,Kisailus David,Beck Ulrich,Bill Joachim,Aldinger Fritz,Arzt Eduard,Lange Frederick F

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. The Blue Laser Diode;Nakamura,1997

2. GaN and Related Materials for Device Applications

3. GaN Derived from Carbodiimide-Based Polymeric Precursors

4. Gallium nitride thin layers via a liquid precursor route

5. Chemical Solution Routes to Single-Crystal Thin Films

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4. The optimization of chemical mechanical planarization process-parameters of c-plane gallium-nitride using Taguchi method and grey relational analysis;Materials & Design;2016-08

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