Impact of Atomic Layer Etching on Process Tool Design
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference28 articles.
1. Wet Chemical Digital Etching of GaAs at Room Temperature
2. Digital etching of GaAs: New approach of dry etching to atomic ordered processing
3. Feasibility of atomic layer etching of polymer material based on sequential O2 exposure and Ar low-pressure plasma-etching
4. Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
5. Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. CH4 Concentration Distribution in a Semiconductor Process Chamber Measured by the CT-TDLAS;ECS Journal of Solid State Science and Technology;2018
2. Atomic layer etching of gallium nitride (0001);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-11
3. Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching;ECS Journal of Solid State Science and Technology;2015
4. Publisher's Note: Impact of Atomic Layer Etching on Process Tool Design [ECS J. Solid State Sci. Technol., 4, N5001 (2015)];ECS Journal of Solid State Science and Technology;2015
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