Atomic layer etching of gallium nitride (0001)-Reference-Cited by-同舟云学术

Atomic layer etching of gallium nitride (0001)

Published:2017-11 Issue:6 Volume:35 Page:060603
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kauppinen Christoffer¹,Khan Sabbir Ahmed²,Sundqvist Jonas³,Suyatin Dmitry B.⁴,Suihkonen Sami¹,Kauppinen Esko I.²,Sopanen Markku¹

Affiliation:

1. Department of Electronics and Nanoengineering, Micronova, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland

2. Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, FI-00076 Aalto, Finland

3. Fraunhofer Institute for Ceramic Technologies and Systems IKTS, Winterbergstr. 28, 01277 Dresden, Germany

4. Division of Solid State Physics and NanoLund, Lund University, P.O. Box 118, SE-22100 Lund, Sweden

Funder

Suomen Akatemia (Academy of Finland)

Aalto-Yliopisto (Aalto University)

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

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