Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124165
Reference7 articles.
1. Self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and Ar+ion irradiation
2. Substrate orientation dependence of self-limited atomic-layer etching of Si with chlorine adsorption and low-energy Ar+ irradiation
3. Atomic-layer etching of Ge using an ultraclean ECR plasma
4. Atomic-layer surface reaction of chlorine on Si and Ge assisted by an ultraclean ECR plasma
5. Directional etching of Si with perfect selectivity to SiO2using an ultraclean electron cyclotron resonance plasma
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