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Brief Review of Atomic Layer Etching Based on Radiofrequency-Biased Ar/C4F6-Mixture-Based Inductively Coupled Plasma Characteristics

  • Published:2023-03-30 Issue:2 Volume:32 Page:34-37
  • ISSN:2288-6559
  • Container-title:Applied Science and Convergence Technology
  • language:en
  • Short-container-title:Appl. Sci. Converg. Technol.

Author:

Yoon Min Young1ORCID,Yeom Hee Jung1ORCID,Jeong Jong-Ryul2ORCID,Kim Jung Hyung1ORCID,Lee Hyo-Chang13ORCID

Affiliation:

1. Semiconductor Integrated Metrology Team, Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea

2. Department of Materials Science & Engineering, Chungnam National University, Daejeon 34134, Republic of Korea

3. Department of Semiconductor Science, Engineering and Technology, Korea Aerospace University, Goyang 10540, Republic of Korea

Funder

National Research Foundation

Ministry of Science and ICT and the R&D

National Research Council of Science and Technology

Korea Evaluation Institute of Industrial Technology

Korea Research Institute of Standards and Science

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous),General Medicine
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